Semiconductor structure and manufacturing method thereof

ABSTRACT

The present disclosure provides a semiconductor structure, including a transistor. The transistor includes a semiconductive substrate, a gate structure, a pair of highly doped regions and a dielectric element. The semiconductive substrate has a top surface. The gate structure is over the top surface. The pair of highly doped regions is separated by the gate structure. The dielectric element is embedded in the semiconductive substrate. The dielectric element is laterally and vertically misaligned with the pair of highly doped regions.

PRIORITY CLAIM AND CROSS-REFERENCE

This patent application is a divisional of U.S. patent application Ser.No. 16/371,900 filed on Apr. 1, 2019, entitled of “SEMICONDUCTORSTRUCTURE AND MANUFACTURING METHOD THEREOF”, which claims the benefit ofU.S. Provisional Patent Application Ser. No. 62/738,499 filed Sep. 28,2018, the entire disclosure of which is hereby incorporated byreference.

BACKGROUND

Power device is always the major device of power driver products. As fora high voltage or medium voltage power device, large oxide diffusionarea may be necessary for bearing high applied voltage or medium appliedvoltage. Large oxide diffusion area always suffers more stresses duringthe manufacturing processes of the power device. Consequently, crystaldefects which may induce current leakage of the power device mayincrease in the large oxide diffusion area of the power device.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It shouldbe noted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a top view of a semiconductor structure in accordance withsome embodiments of the present disclosure.

FIG. 2A is a top view of a semiconductor structure in accordance withsome embodiments of the present disclosure.

FIGS. 2B and 2C are cross-sections of the semiconductor structure inaccordance with some embodiments of the present disclosure.

FIG. 21 ) is a top view of a semiconductor structure in accordance withsome embodiments of the present disclosure.

FIG. 2E is a cross-section of the semiconductor structure in accordancewith some embodiments of the present disclosure.

FIGS. 3A to 3B are top views of a semiconductor structure in accordancewith some embodiments of the present disclosure.

FIGS. 4A to 4C are top views of a semiconductor structure in accordancewith some embodiments of the present disclosure.

FIGS. 5A and 5B are top views of a semiconductor structure in accordancewith some embodiments of the present disclosure.

FIGS. 5C and 5D are cross-sections of the semiconductor structure inaccordance with some embodiments of the present disclosure.

FIG. 5E is a top view of the semiconductor structure in accordance withsome embodiments of the present disclosure.

FIGS. 6A to 6C are top views of a semiconductor structure in accordancewith some embodiments of the present disclosure.

FIG. 7 is a flowchart illustrating a method for manufacturing asemiconductor structure in accordance with some embodiments of thepresent disclosure.

FIGS. 8A-8J are cross-sections and top views of a semiconductorstructure at various stages of manufacture in accordance with someembodiments of the present disclosure.

FIGS. 9A-9M are cross-sections and top views of a semiconductorstructure at various stages of manufacture in accordance with someembodiments of the present disclosure.

FIGS. 10A-10M are cross-sections and top views of a semiconductorstructure at various stages of manufacture in accordance with someembodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Embodiments of the present disclosure are discussed in detail below. Itshould be appreciated, however, that the present disclosure providesmany applicable inventive concepts that can be embodied in a widevariety of specific contexts. The specific embodiments discussed aremerely illustrative and do not limit the scope of the disclosure.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper,” “lower,” “left,” “right” and the like, may be usedherein for ease of description to describe one element or feature'srelationship to another element(s) or feature(s) as illustrated in thefigures. The spatially relative terms are intended to encompassdifferent orientations of the device in use or operation in addition tothe orientation depicted in the figures. The apparatus may be otherwiseoriented (rotated 90 degrees or at other orientations) and the spatiallyrelative descriptors used herein may likewise be interpretedaccordingly. It should be understood that when an element is referred toas being “connected to” or “coupled to” another element, it may bedirectly connected to or coupled to the other element, or interveningelements may be present.

FIG. 1 is a top view of a semiconductor structure 1 in accordance withsome embodiments of the present disclosure. The semiconductor structure1 includes a transistor 10. The transistor 10 includes a semiconductivesubstrate 101, a gate structure 102, a first pair of highly dopedregions 103S and 103D and a dielectric element 105.

The semiconductive substrate 101 has a top surface 101A. The gatestructure 102 may be formed over the top surface 101A, The doped regions103S and 1031 may be separated by the gate structure 102. The dielectricelement 105 may be embedded in the semiconductive substrate 101. Thedielectric element 105 may be misaligned with the doped regions 103S and103D. In detail, the dielectric element 105 may be laterally andvertically misaligned with the doped regions 103S and 103D.

FIG. 2A is a top view of a semiconductor structure 2 in accordance withsome embodiments of the present disclosure. The semiconductor structure2 includes a transistor 20. The transistor 20 includes a semiconductivesubstrate 201, a gate structure 202, a first pair of highly dopedregions 203S and 203D, a second pair of highly doped regions 204S and204D and a dielectric element 205.

The semiconductive substrate 201 has a top surface 201A. The gatestructure 202 may be formed over the top surface 201A. The doped regions203S and 203D may be separated by the gate structure 202. The dopedregions 204S and 204D may be separated by the gate structure 202. Thedielectric element 205 may be embedded in the semiconductive substrate201. The dielectric element 205 may be misaligned with the doped regions203S and 203D and misaligned with the doped regions 204S and 204D. Indetail, the dielectric element 205 may be laterally and verticallymisaligned with the doped regions 203S and 203D. Further, the dielectricelement 205 may be laterally and vertically misaligned with the dopedregions 204S and 2041, In some embodiments, the dielectric element 205may be formed under the gate structure 202.

FIGS. 2B and 2C are cross-sections of the semiconductor structure 2 inaccordance with some embodiments of the present disclosure. The gatestructure 202 includes a gate electrode 202 a, spacers 202 b and adielectric layer 202 c. The dielectric layer 202 c may be formed betweenthe semiconductive substrate 201 and the gate electrode 202 a. Thespacers 202 b may be formed over the semiconductive substrate 201. Thespacers 202 b cover the dielectric layer 202 c and part of the gateelectrode 202 a. In some embodiments, the spacers 202 b cover two sidesof the stack of the dielectric layer 202 c and the gate electrode 202 a,and a surface of the gate electrode 202 a may be exposed between thespacers 202 b.

FIG. 21 ) is a top view of the semiconductor structure 2 in accordancewith some embodiments of the present disclosure. FIG. 2E is across-section of the semiconductor structure 2 in accordance with someembodiments of the present disclosure. As shown in FIGS. 2D and 2E, thetransistor 20 includes a plurality of dielectric elements 205′. Each ofthe plurality of dielectric elements 205′ may be laterally andvertically misaligned with the doped regions 203S and 203D. Further,each of the plurality of dielectric elements 205′ may be laterally andvertically misaligned with the doped regions 204S and 204D, In someembodiments, the dielectric elements 205′ may be formed within a centerarea C related to the top surface 201A of the semi conductive substrate201.

FIG. 3A is a top view of a semiconductor structure 3 in accordance withsome embodiments of the present disclosure. The semiconductor structure3 includes a transistor 30. The transistor 30 includes a semiconductivesubstrate 301, a gate structure 302, a first pair of highly dopedregions 303S and 303D, a second pair of highly doped regions 304S and304D and a dielectric element 305.

The semiconductive substrate 301 has a top surface 301A. The gatestructure 302 is disposed over the top surface 301A. The gate structure302 may be in a shape of crisscross. The doped regions 303S and 303D areseparated by the gate structure 302. The doped regions 304S and 304D areseparated by the gate structure 302. In some embodiments, the dopedregions 303S and 304S may be source regions of the transistor 30. Thedoped regions 303D and 304D may be drain regions of the transistor 30.

In some embodiments, the gate structure 302 with the shape of crisscrossdefines the semiconductive substrate 301 of the transistor 301 as fourparts. Further, relative to the four parts defined in the semiconductivesubstrate 301 of the transistor 30, the doped regions 303S and 304S maybe formed diagonally in the semiconductive substrate 301 of thetransistor 301. Similarly, the doped regions 303D and 304D may be formeddiagonally in the semiconductive substrate 301 of the transistor 30. Insome embodiments, the source region 303S may be paired with the drainregion 304D, and the source region 304S may be paired with the drainregion 3031).

The dielectric element 305 is embedded in the semiconductive substrate301. The dielectric element 305 is misaligned with the doped regions303S and 303D and misaligned with the doped regions 304S and 304D. Indetail, the dielectric element 305 is laterally and verticallymisaligned with the doped regions 303S and 303D. Further, the dielectricelement 305 is laterally and vertically misaligned with the dopedregions 304S and 304D. In some embodiments, the dielectric element 305is formed under the gate structure 303 with the shape of crisscross.

FIG. 3B is a top view of the semiconductor structure 3 in accordancewith some embodiments of the present disclosure. As shown in FIG. 3B,the transistor 30 includes a plurality of dielectric elements 305′. Eachof the plurality of dielectric elements 305′ may be laterally andvertically misaligned with the doped regions 303S and 303D. Further,each of the plurality of dielectric elements 305′ may be laterally andvertically misaligned with the doped regions 304S and 304D.

FIG. 4A is a top view of a semiconductor structure 4 in accordance withsome embodiments of the present disclosure. The semiconductor structure4 includes a transistor 40. The transistor 40 includes a semiconductivesubstrate 401, a gate 402, a source region 403S, a drain region 4031)and an isolation component 405.

The source region 403S and the drain region 403D may be formed in thesemiconductor substrate 401. The gate 402 may be formed over thesemiconductor substrate 401 and between the source region 403S and thedrain region 4031). There may be a channel 403C between the sourceregion 403S and the drain region 403D. The isolation component 405 maybe embedded in the semiconductive substrate 401. In detail, theisolation component 405 may be spaced apart from the channel 403Cbetween the source region 403S and the drain region 403D. In otherwords, the formation of the isolation component 405 may not block thechannel 403C between the source region 403S and the drain region 403D.

FIG. 4B is a top view of the semiconductor structure 4 in accordancewith some embodiments of the present disclosure. The transistor 40includes two isolation components 405′. The isolation components 405′may be embedded in the semiconductive substrate 401, In detail, both ofthe isolation components 405′ may be spaced apart from the channel 403Cbetween the source region 403S and the drain region 403D. In otherwords, the formations of the isolation components 405′ may not block thechannel 403C between the source region 403S and the drain region 403D.In some embodiments, the channel 403C may be a shortest channel betweenthe source region 403S and the drain region 403D.

FIG. 4C is a top view of the semiconductor structure 4 in accordancewith some embodiments of the present disclosure. The source region 403Shas a source contact 403SC. The drain region 403D has a drain contact403DC, The gate 402 has a pair of gate contacts 402G1 and 402G2. Thesource contact 403SC and the drain contact 403DC may protrude from thesurface of the semiconductive substrate 401. The gate contacts 402G1 and402G2 may protrude from a surface of the gate 402, and be used for beingapplied voltage to active the channel 4030.

FIG. 5A is a top view of a semiconductor structure 5 in accordance withsome embodiments of the present disclosure. The semiconductor structure5 includes a transistor 50. The transistor 50 includes a semiconductivesubstrate 501, a gate 502, a source region 503S, a drain region 503D, asource region 504S, a drain region 504D and an isolation component 505.

The source regions 503S, 504S and the drain regions 503D, 504D may beformed in the semiconductor substrate 501. The gate 502 may be formedover the semiconductor substrate 501. Further, the gate 502 may beformed between the source region 503S and the drain region 503D, andbetween the source region 504S and the drain region 504D. There may be achannel 503C between the source region 503S and the drain region 503D,and a channel 504C between the source region 504S and the drain region504D. The isolation component 405 may be embedded in the semiconductivesubstrate 501.

In detail, the isolation component 505 may be spaced apart from thechannel 503C between the source region 503S and the drain region 503D,The isolation component 505 may be spaced apart from the channel 504Cbetween the source region 504S and the drain region 504D. In otherwords, the formation of the isolation component 505 may not block thechannel 503C between the source region 503S and the drain region 503Dand may not block the channel 504C between the source region 504S andthe drain region 504D.

FIG. 5B is a top view of the semiconductor structure 5 in accordancewith some embodiments of the present disclosure. The source region 503Shas a source contact 5035C. The drain region 503D has a drain contact503DC. The source region 504S has a 504SC. The drain region 504D has adrain contact 504DC. The gate 502 has a pair of gate contacts 502G1 and502G2.

FIGS. 5C and 51 ) are cross-sections of the semiconductor structure 5 inaccordance with some embodiments of the present disclosure. The sourcecontacts 503SC, 504SC and the drain contacts 503DC, 504DC may protrudefrom the surface of the semiconductive substrate 501. The gate contacts502G1 and 502G2 may protrude from a surface of the gate 502, and be usedfor being applied voltage to active the channels 503C and 504C. The gatestructure 502 includes a gate electrode 502 a, spacers 502 b and adielectric layer 502 c. The dielectric layer 502 c may be formed betweenthe semiconductive substrate 501 and the gate electrode 502 a. Thespacers 502 b may be formed over the semiconductive substrate 501. Thespacers 502 b cover the dielectric layer 502 c and part of the gateelectrode 502 a, in some embodiments, the spacers 502 b cover two sidesof the stack of the dielectric layer 502 c and the gate electrode 502 a,and a surface of the gate electrode 502 a may be exposed between thespacers 502 b.

FIG. 5E is a top view of the semiconductor structure 5 in accordancewith some embodiments of the present disclosure. As shown in FIG. 5E,the transistor 50 includes a plurality of isolation components 505′.Each of the plurality of isolation components 505′ may be spaced apartfrom the channel 503C between the source region 503S and the drainregion 503D. Each of the plurality of the isolation components 505′ maybe spaced apart from the channel 504C between the source region 504S andthe drain region 504D. In other words, the formations of the isolationcomponents 505′ may not block the channel 503C between the source region503S and the drain region 5031) and may not block the channel 504Cbetween the source region 504S and the drain region 50413.

FIG. 6A is a top view of a semiconductor structure 6 in accordance withsome embodiments of the present disclosure. The semiconductor structure6 includes a transistor 60. The transistor 60 includes a semiconductivesubstrate 601, a gate structure 602, a source region 603S, a drainregion 603D, a source region 604S, a drain region 604D and an isolationcomponent 605.

The source regions 603S, 604S and the drain regions 603D, 604D may beformed in the semiconductor substrate 601. The gate 602 may be formed ina shape of crisscross over the semiconductor substrate 601. The gatestructure 602 may be formed between the source region 603S and the drainregion 603D, and between the source region 604S and the drain region604D. In other words, the source region 603S and the drain region 603Dare separated by the gate 602. The source region 604S and the drainregion 604D are separated by the gate 602.

Further, the gate structure 602 may be formed between the source region603S and the drain region 604D, and between the source region 604S andthe drain region 603D. In other words, the source region 604S and thedrain region 603D are separated by the gate 602. The source region 603Sand the drain region 60-1D are separated by the gate 602. Accordingly,there may be a channel CH1 between the source region 603S and the drainregion 603D, a channel CH2 between the source region 604S and the drainregion 604D, a channel CH3 between the source region 603S and the drainregion 604D, and a channel CH4 between the source region 604S and thedrain region 603D. The isolation component 605 may be embedded in thesemiconductive substrate 601. CH1 between the source region 603S and thedrain region 603D. The isolation component 605 may be spaced apart fromthe channel CH2 between the source region 604S and the drain region604D. In other words, the formation of the isolation component 605 maynot block the channel CH1 between the source region 603S and the drainregion 603D and may not block the channel CH2 between the source region604S and the drain region 6041).

Further, the isolation component 605 may be spaced apart from thechannel CH3 between the source region 603S and the drain region 604D.The isolation component 605 may be spaced apart from the channel CH4between the source region 604S and the drain region 603D. In otherwords, the formation of the isolation component 605 may not block thechannel CH3 between the source region 603S and the drain region 604D andmay not block the channel CH4 between the source region 604S and thedrain region 603D.

FIG. 6B is a top view of the semiconductor structure 6 in accordancewith some embodiments of the present disclosure. The source region 603Shas a source contact 603SC. The drain region 603D has a drain contact603DC. The source region 604S has a 604SC. The drain region 604D has adrain contact 604DC. The source contacts 603SC, 604SC and the draincontacts 603DC, 604DC may protrude from the surface of thesemiconductive substrate 601. The gate 602 has a first pair of gatecontacts 602G1 and 602G2, and a second pair of gate contacts 602G3 and602G4, The first pair of gate contacts 602G1 and 602G2 may protrude froma surface of the gate 602, and be used for being applied voltage toactive the channel s CH1 and CH2. The second pair of gate contacts 602G3and 602G4 may protrude from the surface the surface of the gate 602, andbe used for being applied voltage to active the channels CH3 and CH4.

FIG. 6C is a top view of the semiconductor structure 6 in accordancewith some embodiments of the present disclosure. As shown in FIG. 6C,the transistor 60 includes a plurality of isolation components 605′.Each of the plurality of isolation components 605′ may be spaced apartfrom the channel CH1 between the source region 603S and the drain region603D. Each of the plurality of the isolation components 605′ may bespaced apart from the channel CH2 between the source region 604S and thedrain region 604D. Each of the plurality of the isolation components605′ may be spaced apart from the channel CH3 between the source region603S and the drain region 604D. Each of the plurality of the isolationcomponents 605′ may be spaced apart from the channel CH4 between thesource region 604S and the drain region 603D, In other words, theformations of the isolation components 605′ may not block the channelsCH1 to CH4 between the source regions 603S, 604S and the drain regions603D, 604D.

Some embodiments of the present disclosure provide a method formanufacturing a semiconductor structure as shown in FIG. 7 . The methodincludes: operation 701, in which a semiconductive substrate of atransistor is provided; operation 702, in which at least one dielectricelement is formed in the semiconductive substrate of the transistor;operation 703, in which a gate structure is formed over thesemiconductive substrate; and operation 704, in which a source regionand a drain region are formed in the semiconductive substrate of thetransistor, wherein the gate structure is between the source region andthe drain region, and a channel between the source region and the drainregion is formed away from the at least one dielectric element.

In some embodiments, operation 702, in which the at least one dielectricelement is formed, includes two sub-operations: (i) forming at least onetrench in the semiconductive substrate of the transistor; and (ii)filling the at least one trench with oxide material for forming the atleast one dielectric element.

The above methods are illustrated in more detail in the followingdescription by providing various embodiments. However, the descriptionmeant to be illustrative only, and is not intended to limit the presentdisclosure.

To illustrate operation 701 of the method, FIGS. 8A and 8B are providedin accordance with some embodiments of the present disclosure. As shownin FIG. 8A, a semiconductive substrate 800 is provided. One unit oftransistor 810 may be defined in the semiconductive substrate 800. FIG.8B is a cross-section of the semiconductive substrate 800 in FIG. 8A.

FIGS. 8C to 8F illustrate operation 702 of the method in accordance withsome embodiments of the present disclosure. When operations of shallowtrench isolation (STI) are performed for defining the transistor 810,the operations of STI are also performed for forming at least onedielectric element 820 in the semiconductive substrate 800 of thetransistor 810. As shown in FIG. 8C, the semiconductive substrate 800 isetched for defining the transistor 810. At the same time, thesemiconductive substrate 800 within the area of the transistor 810 isetched. In detail, at least one trench 830 is formed in thesemiconductive substrate 800 of the transistor 810 while thesemiconductive substrate 800 is etched for defining the transistor 810.FIG. 8D is a cross-section of the semiconductive substrate 800 in FIG.8C.

As shown in FIG. 8E, when the filling operation of STI is performed withoxide material, the at least one trench 830 in the semiconductivesubstrate 800 of the transistor 810 is filled with the oxide material atthe same time. Accordingly, the at least one dielectric element 820 isformed in the semiconductive substrate 800 of the transistor 810. FIG.8F is a cross-section of the semiconductive substrate 800 in FIG.

FIGS. 8G to 8H illustrate operation 703 of the method in accordance withsome embodiments of the present disclosure. As shown in FIG. 8G, a gatestructure 850 is formed over the semiconductive substrate 800. FIG. 8His a cross-section of the semiconductive substrate 800 in FIG. 8G. FIGS.8I to 8J illustrate operation 704 of the method in accordance with someembodiments of the present disclosure. As shown in FIG. 8I, a sourceregion 840S is formed in the semiconductive substrate 800, and a drainregion 840D is formed in the semiconductive substrate 800. In someembodiments, the gate structure 850 is between the source region 840Sand the drain region 840D. A channel between the source region 840S andthe drain region 840D is formed away from the at least one dielectricelement 820. FIG. 8J is a cross-section of the semiconductive substrate800 in FIG. 8I.

To illustrate operation 701 of the method, FIGS. 9A and 9B are providedin accordance with some embodiments of the present disclosure. As shownin FIG. 9A, a semiconductive substrate 900 is provided. One unit oftransistor 910 may be defined in the semiconductive substrate 900. FIG.9B is a cross-section of the semiconductive substrate 900 in 9A.

FIGS. 9C to 9F illustrate operation 702 of the method in accordance withsome embodiments of the present disclosure. When operations of STI areperformed for defining the transistor 910, the operations of STI arealso performed for forming plurality of isolation components 920 in thesemiconductive substrate 900 of the transistor 910. As shown in FIG. 9C,the semiconductive substrate 900 is etched for defining the transistor910. At the same time, the semiconductive substrate 900 within the areaof the transistor 910 is etched. In detail, a plurality of trenches 930are formed in the semiconductive substrate 900 of the transistor 910while the semiconductive substrate 900 is etched for defining thetransistor 910. FIG. 9D is a cross-section of the semiconductivesubstrate 900 in FIG. 9C.

As shown in FIG. 9E, while the filling operation of is performed withoxide material, the trenches 930 in the semiconductive substrate 900 ofthe transistor 910 is filled with the oxide material at the same time.Accordingly, the isolation components 920 are formed in thesemiconductive substrate 900 of the transistor 910. FIG. 9F is across-section of the semiconductive substrate 900 in FIG. 9E.

FIGS. 9G to 9H illustrate operation 703 of the method in accordance withsome embodiments of the present disclosure. As shown in FIG. 9G, a gatestructure 950 is formed over the semiconductive substrate 900. FIG. 9His a cross-section of the semiconductive substrate 900 in FIG. 9G. FIGS.9I to 9 f illustrate operation 704 of the method in accordance with someembodiments of the present disclosure. As shown in FIG. 9I, sourceregions 940S and 942S are formed in the semiconductive substrate 900,and drain regions 940D and 942D are formed in the semiconductivesubstrate 900. In some embodiments, the gate structure 950 is betweenthe source region 940S and the drain region 940D, and is between thesource region 940S and the drain region 940D. A channel between thesource region 940S and the drain region 940D is formed away from theisolation components 920, A channel between the source region 942S andthe drain region 942D is formed away from the isolation components 920.FIG. 9J is a cross-section of the semiconductive substrate 900 in FIG.9I.

In some embodiments, contacts for the source regions, the drain regionsand the gate structure may be formed. FIGS. 9K to 9M illustrate themethod in accordance with some embodiments of the present disclosure. Asshown in FIG. 9K, a source contact 940SC is formed on the source region940S, A source contact 9425C is formed on the source region 942S. Adrain contact 940DC is formed on the drain region 940D. A drain contact942DC is formed on the drain region 942D. Further, gate contacts 950G1and 950G2 are formed on a surface of the gate structure 950. FIGS. 9Land 9M are cross-sections of the semiconductive substrate 900 in FIG.9K.

To illustrate operation 701 of the method, FIGS. 10A and 10B areprovided in accordance with some embodiments of the present disclosure.As shown in FIG. 10A, a semiconductive substrate 100 is provided. Oneunit of transistor 110 may be defined in the semiconductive substrate100. FIG. 9B is a cross-section of the semiconductive substrate 100 inFIG. 10A.

FIGS. 10C to 10F illustrate operation 702 of the method in accordancewith some embodiments of the present disclosure. When operations of STIare performed for defining the transistor 110, the operations of STI arealso performed for forming an isolation component 120 in thesemiconductive substrate 100 of the transistor 110. As shown in FIG.10C, the semiconductive substrate 100 is etched for defining thetransistor 110. At the same time, the semiconductive substrate 100 ofthe transistor 110 is etched. In detail, a trench 130 is formed in thesemiconductive substrate 100 of the transistor 110 while thesemiconductive substrate 100 is etched for defining the transistor 110.FIG. 10D is a cross-section of the semiconductive substrate 100 in FIG.10C.

As shown in FIG. 10E, while the filling operation of STI is performedwith oxide material, the trench 130 in the semiconductive substrate 100of the transistor 110 is filled with the oxide material at the sametime. Accordingly, the isolation component 120 is formed in thesemiconductive substrate 100 of the transistor 110. FIG. 10F is across-section of the semiconductive substrate 100 in FIG. 10E.

FIGS. 10G to 10H illustrate operation 703 of the method in accordancewith some embodiments of the present disclosure. As shown in FIG. 10G, agate structure 150 is formed over the semiconductive substrate 100. Thegate structure 150 is in a shape of crisscross. FIG. 10H is across-section of the semiconductive substrate 100 in FIG. 10G, FIGS. 10Ito 10J illustrate operation 704 of the method in accordance with someembodiments of the present disclosure. As shown in FIG. 10I, sourceregions 140S and 142S are formed in the semiconductive substrate 100,and drain regions 140D and 142D are formed in the semiconductivesubstrate 100.

In detail, the gate structure 150 is between the source region 140S andthe drain region 140D. A channel between the source region 140S and thedrain region 140D is formed away from the isolation components 120. Thegate structure 150 is between the source region 142S and the drainregion 142D. A channel between the source region 142S and the drainregion 142D is formed away from the isolation components 120. Further,the gate structure 150 is between the source region 140S and the drainregion 142D. A channel between the source region 140S and the drainregion 142D is formed away from the isolation components 120. The gatestructure 150 is between the source region 142S and the drain region140D. A channel between the source region 142S and the drain region1401D is formed away from the isolation components 120. FIG. 10J is across-section of the semiconductive substrate 100 in FIG. 10I.

In some embodiments, contacts for the source regions, the drain regionsand the gate structure may be formed. FIGS. 10K to 10M illustrate themethod in accordance with some embodiments of the present disclosure. Asshown in FIG. 10K, a source contact 140SC is formed on the source region140S. A source contact 142SC is formed on the source region 142S. Adrain contact 140DC is formed on the drain region 140D. A drain contact142DC is formed on the drain region 142D, Further, gate contacts 150G1to 150G4 are formed on a surface of the gate structure 150. In someembodiments, the gate contacts 150G1 to 150G4 are respectively formed atfour ends of the gate 150 with the shape of crisscross. FIGS. 10L and10M are cross-sections of the semiconductive substrate 100 in FIG. 10K.In some embodiments, a width of the mentioned gate or gate structure ofthe semiconductor structure is greater than 20 micrometers.

Some embodiments of the present disclosure provide a semiconductorstructure. The semiconductor structure includes a transistor. Thetransistor includes a semiconductive substrate, a gate structure, afirst pair of highly doped regions and a dielectric element. Thesemiconductive substrate has a top surface. The gate structure is overthe top surface. The first pair of highly doped regions is separated bythe gate structure. The dielectric element is embedded in thesemiconductive substrate. The dielectric element is laterally andvertically misaligned with the first pair of highly doped regions.

Some embodiments of the present disclosure provide a semiconductorstructure. The semiconductor structure includes a transistor. Thetransistor includes a semiconductive substrate, a first source region, afirst drain region, a gate and at least one isolation component. Thefirst source region is in the semiconductive substrate. The first drainregion is in the semiconductive substrate. The gate is over thesemiconductive substrate and between the first source region and thefirst drain region. The at least one isolation component is embedded inthe semiconductive substrate. The at least one isolation component isspaced apart from a first channel formed between the first source regionand the first drain region.

Some embodiments of the present disclosure provide a method formanufacturing a semiconductor structure. The method includes: providinga semiconductive substrate of a transistor; forming at least onedielectric element in the semiconductive substrate of the transistor;forming a source region and a drain region in the semiconductivesubstrate of the transistor, wherein a channel between the source regionand the drain region is formed away from the at least one dielectricelement.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor structure, comprising: atransistor, comprising: a semiconductive substrate having a top surface;a gate structure over the top surface, wherein the gate structurecomprises a gate electrode, a dielectric layer and spacers, thedielectric layer is between the semiconductive substrate and the gateelectrode, and the spacers cover the dielectric layer and part of thegate electrode; a first pair of highly doped regions separated by thegate structure; a second pair of highly doped regions separated by thegate structure; and a dielectric element embedded in the semiconductivesubstrate; wherein the dielectric element is laterally and verticallymisaligned with the first pair of highly doped regions and is laterallyand vertically misaligned with the second pair of highly doped regions.2. The semiconductor structure of claim 1, wherein the dielectricelement is under the gate structure.
 3. The semiconductor structure ofclaim 1, wherein the dielectric element is embedded within a center areaof the semiconductive substrate.
 4. The semiconductor structure of claim1, wherein a width of the gate is greater than 20 micrometers.
 5. Thesemiconductor structure of claim 1, wherein the dielectric element isspaced part from a channel between the first pair of highly dopedregions.
 6. The semiconductor structure of claim 1, wherein one regionof the first pair of highly doped regions has a first contact the otherregion of the first pair of highly doped regions has a second contact,one region of the second pair of highly doped regions has a thirdcontact and the other region of the second pair of highly doped regionshas a fourth contact.
 7. The semiconductor structure of claim 6, whereinthe first contact and the second contact protrude from a surface of thesemiconductive substrate.
 8. The semiconductor structure of claim 1,wherein the gate structure comprises a pair of gate contacts on asurface of the gate structure.
 9. The semiconductor structure of claim8, wherein the pair of gate contacts protrudes the surface of the gatestructure.
 10. A semiconductor structure, comprising: a transistor,comprising: a semiconductive substrate; a first source region in thesemiconductive substrate; a first drain region in the semiconductivesubstrate; a second source region in the semiconductive substrate; asecond drain region in the semiconductive substrate a gate over thesemiconductive substrate, wherein the gate is between the first sourceregion and the first drain region and between the second source regionand the second drain region, wherein the gate comprises an electrode, adielectric layer and spacers, the dielectric layer is between thesemiconductive substrate and the electrode, and the spacers cover thedielectric layer and part of the electrode; at least one isolationcomponent embedded in the semiconductive substrate; wherein the at leastone isolation component is spaced apart from a first channel formedbetween the first source region and the first drain region, and the atleast one isolation component is spaced apart from a second channelformed between the second source region and the second drain region. 11.The semiconductor structure of claim 10, wherein the first channel is ashortest channel between the first source region and the first drainregion.
 12. The semiconductor structure of claim 10, wherein the firstsource region has a first source contact protruding the semiconductivesubstrate and the first drain region has a first drain contactprotruding the semiconductive substrate.
 13. The semiconductor structureof claim 10, wherein the second source region has a second sourcecontact protruding the semiconductive substrate and the second drainregion has a second drain contact protruding the semiconductivesubstrate.
 14. The semiconductor structure of claim 10, wherein the atleast one isolation component is misaligned with the first source regionand misaligned with the first drain region.
 15. The semiconductorstructure of claim 10, wherein the at least one isolation component ismisaligned with the second source region and misaligned with the seconddrain region.
 16. The semiconductor structure of claim 10, wherein theat least one isolation component is under the gate.
 17. Thesemiconductor structure of claim 10, wherein the gate has a first pairof gate contacts, and the first channel is activated when the first pairof gate contacts is applied voltage.
 18. The semiconductor structure ofclaim 17, wherein the gate has a second pair of gate contacts, and thesecond channel is activated when the second pair of gate contacts isapplied voltage.
 19. A semiconductor structure, comprising: atransistor, comprising: a semiconductive substrate having a trenchfilled with oxide material; a first source region in the semiconductivesubstrate; a first drain region in the semiconductive substrate; asecond source region in the semiconductive substrate; a second drainregion in the semiconductive substrate; and a gate over thesemiconductive substrate, wherein the gate is between the first sourceregion and the first drain region and between the second source regionand the second drain region, wherein the gate comprises an electrode, adielectric layer and spacers, the dielectric layer is between thesemiconductive substrate and the electrode, and the spacers cover thedielectric layer and part of the electrode; wherein the trench filledwith oxide material is spaced apart from a first channel formed betweenthe first source region and the first drain region, and the trenchfilled with oxide material is spaced apart from a second channel formedbetween the second source region and the second drain region.
 20. Thesemiconductor structure of claim 19, wherein the trench filled withoxide material is misaligned with the first source region, misalignedwith the first drain region, misaligned with the second source regionand misaligned with the second drain region.